Thiam, A., Zoungrana, M., Ly Diallo, H., Diao, A., Thiam, N., Gueye, S., Deme, M.M., Sarr, M. and Sissoko, G. (2013) Influence of Incident Illumination Angle on Capacitance of a Silicon Solar Cell under Frequency Modulation. Research Journal of Applied Sciences, Engineering and Technology, 5, 1123-1128.
http://www.maxwellsci.com/print/rjaset/

has been cited by the following article:

• TITLE: Illumination Level Effects on Macroscopic Parameters of a Bifacial Solar Cell

  AUTHORS: Nzonzolo  , D. Lilonga-Boyenga, G. Sissoko

  KEYWORDS: Solar Cell; Photo Voltage; Recombination Velocity; Diffusion Length; Series Resistance; Shunt Resistance

  JOURNAL NAME: Energy and Power Engineering, Vol.6 No.3, March 24, 2014

  ABSTRACT: This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.