R. Beneyton, G. Grenet, P. Regreny, M. Gendry, G. Hollinger, B. Canut and C. Priester, “Experimental and Theoretical Investigation into the Difficulties of Thallium Incorporation into Iii-V Semiconductors,” Physics Review B, Vol. 72, No. 12, 2005, pp. 125209. doi:10.1103/PhysRevB.72.125209

has been cited by the following article:

• TITLE: A First Principles Investigation of the Mechanical Properties of g-TlN

  AUTHORS: Qing Peng, Chao Liang, Wei Ji, Suvranu De

  KEYWORDS: g-TlN; Mechanical Properties; High Order Elastic Constants; Density Functional Theory; 2D Materials

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.2 No.4, October 22, 2012

  ABSTRACT: We investigate the structure and mechanical properties of proposed graphene-like hexagonal thallium nitride monolayer (g-TlN) using first-principles calculations based on density-functional theory. Compared to graphene-like hexagonal boron nitride monolayer (g-BN), g-TlN is much softer, with 12% in-plane stiffness, 25%, 22%, and 20% ultimate strengths in armchair, zigzag, and biaxial strains respectively. However, g-TlN has a larger Poisson’s ratio, 0.69, about 3.1 times that of g-BN. It was found that the g-TlN also sustains much smaller strains before rupture. We obtained the second, third, fourth, and fifth order elastic constants for a rigorous continuum description of the elastic response of g-TlN. The second order elastic constants, including in-plane stiffness, are predicted to monotonically increase with pressure while the Poisson’s ratio monotonically decreases with increasing pressure.