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Campbell, S.A., Gilmer, D.C., Wang, X.-C., Hsieh, M.-T., Kim, H.-S., Gladfelter, W.L. and Yan, J. (1997) MOSFET Transistors Fabricated with High Permitivity TiO2 Dielectrics. IEEE Transactions on Electron Devices, 44, 104-109.
https://doi.org/10.1109/16.554800

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