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Xie, Q., Deduytsche, D., Schaekers, M., Caymax, M., Delabie, A., Qu, X.-P. and Detavernier, C. (2010) Implementing TiO2 as Gate Dielectric for Ge-Channel Complementary Metaloxide-Semiconductor Devices by Using HfO2/GeO2 Interlayer. Applied Physics Letters, 97, Article ID: 112095.
https://doi.org/10.1063/1.3490710

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