Article citationsMore>>

Lu, Y., Cong, G.W., Liu, X.L., Lu, D.C. and Wang, Z.G. (2004) Depth Distribution of the Strain in the GaN Layer with Low-Temperature AlN Interlayer on Si(111) Substrate Studied by Rutherford Backscattering/Channeling. Applied Physics Letters, 85, 5562.
https://doi.org/10.1063/1.1830679

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top