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Hofstetter, D., Bau-mann, E., Giorgetta, F.R., Theron, R., Wu, H., Schaff, W.J., Dawlaty, J., George, P.A., Eastman, L.F., Rana, F., Kandaswamy, P.K., Leconte, S. and Monroy, E. (2010) Intersubband Transition-Based Processes and Devices in AlN/ GaN-Based Heterostructures. Proceedings of the IEEE, 7. https://doi.org/10.1109/JPROC.2009.2035465

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