Bussmann, U., Meerbach, F.H.J. and TeKaat, E.H. (1989) Si3N4 Crystallization during High-Temperature Nitrogen Implantation into Silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39, 230-233.

has been cited by the following article:

• TITLE: Characteristics of a Silicon Wafer and after Planting Nitrogen

  AUTHORS: Mehdi Simiari, Ramin Roozehdar Mogaddam

  KEYWORDS: Silicon Wafer, Nitrogen Ion Implantation, XRD Analysis, AFM Analysis, Spectrophotometry Analysis

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.7 No.5, May 17, 2017

  ABSTRACT: In this paper, different steps of work and experiments that are done in order to implant nitrogen ion in silicon with the energy of 25 keV, density of 24 μA/cm2 and doses of 5 × 1013 atom/cm2, 1× 1014 atom/cm2 and 1× 1015 atom/ cm2 (according to the calculation and applying time at planting) at room temperature (in the lack of heat phase) and without annealing will be presented. The XRD analysis is done before and after planting to observe changes in the lattice and the possibility of forming a crystalline phase of silicon nitride in this case. Also, the study of changes in the lattice arrangement and AFM analysis is done to observe the topography of the surface. Besides, the investigation on surface roughness and changes caused by ion implantation on the surface and spectrophotometry analysis before and after planting due to the study of changes in optical properties are done.