Kim, S., Lee, S., Oshima, Y., Kondo, Y., Okunishi, E., Endo, N., Jung, J., Byun, G., Lee, S. and Lee, K. (2013) Scanning Moiré Fringe Imaging for Quantitative Strain Mapping in Semiconductor Devices. Applied Physics Letters, 102, Article ID: 161604. https://doi.org/10.1063/1.4803087

has been cited by the following article:

• TITLE: STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon

  AUTHORS: Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa

  KEYWORDS: STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 16, 2017

  ABSTRACT: We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.