Article citationsMore>>

Kasai, H., Ogawa, H., Nishimura, T., Nakamura, T. (2014) Nitrogen Ion Implantation Isolation Technology for Normally-Off GaN MISFETs on p-GaN Substrate. Phys. Status Solidi C, 11, 914-917. https://doi.org/10.1002/pssc.201300436

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top