TITLE:
Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films
AUTHORS:
Gafur Gulyamov, Abdurasul G. Gulyamov, Feruza R. Muhitdinova
KEYWORDS:
Recombination Centers, Phase Portrait, Generation of Charge Carriers, Recombination of Charge Carriers, Forbidden Zone, Absorption Coefficient
JOURNAL NAME:
Journal of Modern Physics,
Vol.7 No.13,
September
14,
2016
ABSTRACT: Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.