Dieme, N. (2015) Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell under the Influence of the Temperature. American Journal of Optics and Photonics, 3, 13-16.
http://dx.doi.org/10.11648/j.ajop.20150301.13

has been cited by the following article:

• TITLE: Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell

  AUTHORS: Nfally Dieme, Moustapha Sane

  KEYWORDS: Series Resistance, Shunt Resistance, Power, Vertical Junction

  JOURNAL NAME: Energy and Power Engineering, Vol.8 No.3, March 16, 2016

  ABSTRACT: This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (Rsh) and series (Rs) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.