Dieme, N., Seibou, B., Moujtaba El, M.A.O., Gaye, I. and Sissoko, G. (2015) Thermal Behavior of a Parallel Vertical Junction in Silicon Photocell Diet by Static Study of the Series and Shunt Resistors under the Effect of Temperature. International Journal of Innovative Science, Engineering & Technology, 2, 433-437.

has been cited by the following article:

• TITLE: Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation

  AUTHORS: El Hadji Ndiaye, Gokhan Sahin, Moustapha Dieng, Amary Thiam, Hawa Ly Diallo, Mor Ndiaye, Grégoire Sissoko

  KEYWORDS: Silicon Solar Cell, Frequency Modulation, Intrinsic Recombination Velocity at the Junction, Irradiation Energy

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.3 No.11, November 30, 2015

  ABSTRACT: In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.