Article citationsMore>>
Das, A., Pisana, S., Chakraborty, B., Piscanec, S., Saha, S.K., Waghmare, U.V., Novoselov, K.S., Krishnamurthy, H.R., Geim, A.K., Ferrari, A.C. and Sood, A.K. (2008) Monitoring Dopants by Raman Scattering in an Electrochemcally Top-Gated Graphene Transistor. Nature Nanotechnology, 3, 210-215.
http://dx.doi.org/10.1038/nnano.2008.67
has been cited by the following article:
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TITLE:
Doping Graphene by Chemical Treatments Using Acid and Basic Substances
AUTHORS:
Claudia Bautista-Flores, Roberto Ysacc Sato-Berrú, D. Mendoza
KEYWORDS:
Graphene, Doping, Ferric Nitrate, Raman Spectroscopy
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.3 No.10,
October
29,
2015
ABSTRACT: We prepared single-layer graphene films through mechanical exfoliation of Kish graphite and chemical vapor deposition techniques. These samples were treated in nitric acid, sulfuric acid, sodium hydroxide and ammonium hydroxide solutions to induce doping. We used Micro Raman Spectroscopy before and after the chemical functionalization to monitor differences in the Raman spectrum. We found shifting for both G and 2D peaks of graphene and a significant upshifting in samples treated with sulfuric acid, similar to those reported for nitric acid.
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