Pathak, D., Bedi, R.K. and Kaur, D. (2010) Growth of Heteroepitaxial AgInSe2 Layers on Si (100) Substrates by Hot Wall Method. Optoelectronics and Advanced Materials—Rapid Communications, 4, 657-661.

has been cited by the following article:

• TITLE: Dielectric Properties of Er3+ Doped ZnO Nanocrystals

  AUTHORS: N. K. Divya, P. U. Aparna, P. P. Pradyumnan

  KEYWORDS: Solid State Reaction, XRD, Crystallite Size, Bond Length, Dielectric Constant, AC Conductivity

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.5 No.8, August 5, 2015

  ABSTRACT: Erbium doped ZnO nanocrystals were synthesized through solid state reaction route. A detailed structural study was carried out by using X-ray diffraction (XRD) data. This work investigates the changes occurred to the hexagonal wurtzite crystal lattice of ZnO due to the incorporation of Er3+ based on crystalline size. The chemical composition of the samples was confirmed using Energy Dispersive Spectra (EDS) data analysis. Decrease in average crystallite size with increase in rare earth concentration was observed in XRD. The frequency dependence of dielectric constant (εr), dielectric loss (tanδ) and AC conductivity of pure and rare earth doped ZnO were calculated and well explained with Maxwell-Weigner model.