TITLE:
Preparation of Light-Emitting Ytterbium-Doped Tantalum-Oxide Thin Films Using a Simple Co-Sputtering Method
AUTHORS:
Kenta Miura, Kazusa Kano, Yuki Arai, Osamu Hanaizumi
KEYWORDS:
Tantalum Oxide, Ytterbium, Co-Sputtering, Annealing, Photoluminescence
JOURNAL NAME:
Materials Sciences and Applications,
Vol.6 No.2,
February
15,
2015
ABSTRACT: Light-emitting ytterbium-doped tantalum-oxide thin films were prepared using a simple co-sputtering
method for the first time. Sharp photoluminescence peaks having a wavelength of around
980 nm were observed from films annealed from 700°C to 1000°C for 10 to 40 min. The strongest
intensity of the 980-nm peak was obtained from a film deposited using three ytterbium-oxide pellets
and annealed at 800°C for 20 min. Such rare-earth doped tantalum-oxide sputtered films can
be used as high-refractive-index materials of autocloned photonic crystals that can be applied to
novel light-emitting devices, and they will also be used as both anti-reflection and down-conversion
layers for realizing high-efficiency silicon solar cells.