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International Conference on Information, Electronic and Computer Science (ICIECS 2010 E-BOOK)

Zibo,China,11.26-11.28,2010

ISBN: 978-1-935068-42-6 Scientific Research Publishing, USA

E-Book 2224pp Pub. Date: November 2010

Category: Computer Science & Communications

Price: $360

Title: The Meso-Piezo-Capacitive Effects of DBRT Structure
Source: International Conference on Information, Electronic and Computer Science (ICIECS 2010 E-BOOK) (pp 1182-1185)
Author(s): Haiwen Ji, Micro-Nano technology Center, North University of China, Taiyuan, China
Liping Xu, Micro-Nano technology Center, North University of China, Taiyuan, China
Abstract: The double barrier resonant tunneling (DBRT) diode composed of superlattices. External imposition of axial pressure on it will make internal strain which will change the physical dimension of the superlattices, which will change the tunneling current size of the device, at the same external bias voltage. Namely, the small mechanical signal may have a big electric current change, and many electrical properties of the device will be changed by the pressure. The researches in this paper focus on the change of capacity with the pressure, and we call the effect as meso-piezo-capacitive effect.
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