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International Conference on Information, Electronic and Computer Science (ICIECS 2010 E-BOOK)

Zibo,China,11.26-11.28,2010

ISBN: 978-1-935068-42-6 Scientific Research Publishing, USA

E-Book 2224pp Pub. Date: November 2010

Category: Computer Science & Communications

Price: $360

Title: AFM Analysis of Wet Etched AlGaN Epilayers Grown by MOCVD
Source: International Conference on Information, Electronic and Computer Science (ICIECS 2010 E-BOOK) (pp 649-652)
Author(s): Yufu Wang, Information and Control Institute, Weifang University, Weifang 261061, China
Abstract: Epitaxial layers of AlGaN were grown by MOCVD and their surfaces wet chemically etched with phosphorous acid. The grown surfaces and the development of the etched surfaces after 10 and 20 min of etching were studied with atomic force microscopy (AFM). In the grown layers growth features may be resolved while the RMS is as low as 1.5A° in a scan area of 2×2 mm. Surfaces etched for 10 min had developed etch pits and a low RMS roughness of 6A° indicating a uniform quality of the layers. Micrometer scale hexagonal features were observed after 20 min of etching. In some cases a deep hexagonal etch pit is observed in the centre of the hexagonal feature with a 30° rotation to each other, suggesting that the origin is substrate-induced defects.
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