Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation ()
Abstract
Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon.
Share and Cite:
C. Zhang, H. Wang and Y. Qiu, "Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation,"
Engineering, Vol. 3 No. 3, 2011, pp. 227-232. doi:
10.4236/eng.2011.33026.
Conflicts of Interest
The authors declare no conflicts of interest.
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