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А. S. Borukhovich, “Spintronics of Semiconducting Systems,” Deposited VINITI 10.03.05, No. 322-В2005, 48 p. (in Russian)
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B. Huang, D. J. Monsma and I. J. Appelbaum, “Experimental Realization of a Silicon Spin Field-Effect Transistor,” Applied Physics Letters, Vol. 91, No. 7, 2007, Article ID: 072501.
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A. S. Borukhovich, “Materials and Structures of the Semiconduction Spintronics,” Perspektivnye Materialy, No. 4, 2006, pp. 23-31. (in Russian)
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G. V. Lashkaryov, M. V. Radchenko, V. А.Karpina, V. I. Sichkovskii, “Diluted Magnetic Semiconductors as Materials for Spin Electronics,” Physics of the Low Temperature, Vol. 33, No. 2-3, 2007, pp. 228-238. (in Russian)
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L. V. Lutsev, А. I. Stognii and N. N. Novitskii, “Giant Injection Magnetoresistance in Gallium Arsenide Heterostructures/Granular Films with Nanoscale Inclusions of Cobalt,” Pisma v ZhETF, Vol. 81, No. 10, 2005, pp. 636-639. (in Russian)
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E. L. Nagaev, “Physics of Magnetic Semiconductors,” Nauka, Moscow, 1979, p. 431. (in Russian)
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А. S. Borukhovich, N. I. Ignat’eva, A. I. Galyas, S. S. Dorofeychik and K. I. Yanushkevich, “Thin Film Ferromagnetic Composite Material for Spintronics,” Pisma v ZhETF, Vol. 84, No. 9, 2006, pp. 592-595. (in Russian)
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T. S. Altshuler, Yu. I. Goryunov and M. S. Bresler, “Ferromagnetic Odering of the Fe-Impurity in the Semiconductor with the Fluctuation Valence of SmB6,” ZhETF, Vol. 130, No. 4, 2006, pp. 729-736. (in Russian)
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A. S. Borukhovich, N. I. Ignat’eva, A. I. Galyas, O. F. Demidenko, Yu. A. Fedotova, A. I. Stognii and K. I. Yanushkevich, “Superparamagnetism of the Ferromagnetic Composite Material EuO:Fe for Spintronics,” Journal of Nanoelectronics and Optoelectronics, Vol. 3, No. 1, 2008, pp. 82-85.
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А. S. Borukhovich, N. I. Ignatyeva, K. I. Yanushkevich, А. I. Stognii and Yu. А. Fedotova, “Mossbauer Spectroscopy Study of the EuO:Fe Spintronic Material,” Pisma v ZhETF, Vol. 89, No. 4, 2009, pp. 215-218. (in Russian)
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А. S. Borukhovich, N. I. Ignatyeva, А. I. Galyas, K. I. Yanushkevich and А. I. Stognii, “Spin Transistor,” RF Patent No. 2387047, 2010. (in Russian).
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