Preparation of High Ga Content Cu(In,Ga)Se₂ Thin Films by Sequential Evaporation Process Added In₂S₃

Toshiyuki Yamaguchi, Kazuma Tsujita, Shigetoshi Niiyama, Toshito Imanishi

Department of Electrical and Computer Engineering, Wakayama National College of Technology, Gobo, Wakayama 644-0023, Japan.
Industrial Technology Center of Wakayama Prefecture, 60 Ogura, Wakayama-shi, 649-6261, Japan.

DOI: 10.4236/ampc.2012.24B029                

Abstract

High Ga content Cu(In,Ga)Se₂ thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe₂ and CuInSe₂ ternary compounds and subsequently Ga₂Se₃, In₂Se₃ and In₂S₃ binary compounds. The In₂S₃/(Ga₂Se₃+ In₂Se₃) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se₂ structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se₂ thin films increased from 1.30 eV to 1.59 eV with increasing the  In₂S₃ /(Ga₂Se₃+ In₂Se₃) ratio.

Keywords

Cu(In, Ga)Se₂Thin Film; Solar Cell; High Ga Content; Sulfur Incorporation; Sequential Evaporation

Conflicts of Interest

The authors declare no conflicts of interest.

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