Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress ()
ABSTRACT
Using
the k·p theory, the coupling effect between the Δ1 and Δ2’ bands on
the energy band structure of different energy valleys is studied. The
analytical model of the energy-dispersion relationship applicable to uniaxial
stress for arbitrary crystal plane and orientation as well as different energy
valleys is established. For typical crystal orientations, the main parameters
of energy band structure such as band edge level, splitting energy,
density-of-state (DOS) effective mass and conductivity effective mass are
calculated. The calculated results are in good agreement with the data reported
in related literature. Finally, the relationship between the DOS effective
mass, conductivity effective mass and the change of stress and orientation of
different crystal planes is given. The proposed model and calculation results can
provide a theoretical reference for the design of nano-electronic devices and
TCAD simulation.
Share and Cite:
Wang, G. , Yu, M. and Zhou, C. (2018) Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress.
Journal of Applied Mathematics and Physics,
6, 183-197. doi:
10.4236/jamp.2018.61018.
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