Author(s)

Reza Karami¹, Masoud Sabaghi^2*, Massoud Masoumi¹

¹Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Tehran, Iran.
²Laser and Optics Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran, Iran.

The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.

Mole Fraction, GaN/InAlGaN, Breakdown Voltage, High Electron Mobility Transistor (HEMT)

Karami, R. , Sabaghi, M. and Masoumi, M. (2017) A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN. World Journal of Engineering and Technology, 5, 324-332. doi: 10.4236/wjet.2017.52026.