Journal of Materials Science and Chemical Engineering

Volume 5, Issue 1 (January 2017)

ISSN Print: 2327-6045   ISSN Online: 2327-6053

Google-based Impact Factor: 0.72  Citations  

Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

HTML  XML Download Download as PDF (Size: 1071KB)  PP. 35-41  
DOI: 10.4236/msce.2017.51005    3,286 Downloads   4,310 Views  Citations

ABSTRACT

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.

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Arai, T. , Kamimura, K. , Yamamoto, C. , Shirakura, M. , Arimoto, K. , Yamanaka, J. , Nakagawa, K. , Takamatsu, T. , Ogino, M. , Tachioka, M. and Nakazawa, H. (2017) Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation. Journal of Materials Science and Chemical Engineering, 5, 35-41. doi: 10.4236/msce.2017.51005.
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