Author(s)

Ibrahima Diatta¹, Ibrahima Ly², Mamadou Wade², Marcel Sitor Diouf¹, Senghane Mbodji³, Grégoire Sissoko¹

¹Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal.
²Electromechanical Engineering Department, Polytechnic School of Thies University, Thies, Senegal.
³University of Alioune DIOP, Bambey, Senegal.

In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C₀(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on X_cc(T) is studied. X_cc(T) is the abscissa of the maximum of δ(x).

Solar Cell, Capacitance, Temperature

Diatta, I. , Ly, I. , Wade, M. , Diouf, M. , Mbodji, S. and Sissoko, G. (2016) Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light. World Journal of Condensed Matter Physics, 6, 261-268. doi: 10.4236/wjcmp.2016.63024.