Author(s)

Nor Bochra, Bousaid Abdelhak

LRM Laboratory, University of Abou Bekr Belkaïd, Tlemcen, Algeria.

The III-V materials are extensively studied for optoelectronic applications in the blue and UV spectral regions. InGaN ternary alloy is considered for its wide spectral coverage, good electrical characteristics and appreciable resistance to high electrical currents. For this purpose, the operation of InGaN photovoltaic cells was studied by 2D numerical simulation under AM1.5 spectrum illumination, using the software Silvaco and the two environments Athena/Atlas.

Silvaco, Indium Gallium Nitride, Solar Cells, Numerical Simulation, Atlas/Silvaco

Bochra, N. and Abdelhak, B. (2015) Characterization of InGaN Solar Cells. Journal of Materials Science and Chemical Engineering, 3, 88-91. doi: 10.4236/msce.2015.311011.