Author(s)

Hrant Yeritsyan, Norik Grigoryan, Vachagan Harutyunyan, Eleonora Hakhverdyan, Valeriy Baghdasaryan

A. Alikhanian National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia.

This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Е_е - 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.

Long-Time Relaxation (LR); Residual Conductivity (RC); Photoconductivity; Irradiation; Gallium Phosphide

H. Yeritsyan, N. Grigoryan, V. Harutyunyan, E. Hakhverdyan and V. Baghdasaryan, "Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons," Journal of Modern Physics, Vol. 5 No. 1, 2014, pp. 51-54. doi: 10.4236/jmp.2014.51008.