Circuits and Systems

Volume 1, Issue 2 (October 2010)

ISSN Print: 2153-1285   ISSN Online: 2153-1293

Google-based Impact Factor: 0.48  Citations  

Designing Parameters for RF CMOS Cells

HTML  Download Download as PDF (Size: 548KB)  PP. 49-53  
DOI: 10.4236/cs.2010.12008    6,095 Downloads   11,287 Views  Citations

Affiliation(s)

.

ABSTRACT

In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.

Share and Cite:

V. Srivastava, K. Yadav and G. Singh, "Designing Parameters for RF CMOS Cells," Circuits and Systems, Vol. 1 No. 2, 2010, pp. 49-53. doi: 10.4236/cs.2010.12008.

Cited by

[1] Driving a Wireless Robotic Car
2017
[2] Broadband High Dynamic Surveillance
2015
[3] Introduction
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch, 2014
[4] Analysis of drain current and switching speed for SPDT switch and DPDT switch with the proposed DP4T RF CMOS switch
Journal of Circuits, Systems, and Computers, 2012
[5] Capacitive model and S-parameters of double-pole four-throw double-gate RF CMOS switch
Wireless Engineering and Technology, 2011
[6] Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
Microelectronics Journal, 2011
[7] Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
Int'l J. of Communications, Network and System Sciences, 2011
[8] Performance of double-pole four-throw double-gate RF CMOS switch in 45-nm technology
Wireless Engineering and Technology, 2010
[9] Designing parameters for RF CMOS
India Conference (INDICON), 2010 Annual IEEE, 2010

Journals Menu
Follow SCIRP
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.