World Journal of Nano Science and Engineering

Volume 2, Issue 4 (December 2012)

ISSN Print: 2161-4954   ISSN Online: 2161-4962

Google-based Impact Factor: 0.83  Citations  

New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

HTML  Download Download as PDF (Size: 493KB)  PP. 171-175  
DOI: 10.4236/wjnse.2012.24022    4,719 Downloads   8,670 Views  Citations

ABSTRACT

We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.

Share and Cite:

Touati, A. , Chatbouri, S. , Sghaier, N. and Kalboussi, A. (2012) New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature. World Journal of Nano Science and Engineering, 2, 171-175. doi: 10.4236/wjnse.2012.24022.

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