Author(s)

Opeyemi S. Akanbi¹, Haruna A. Usman², Gbemi F. Abass³, Kehinde E. Oni⁴, Akinsanmi S. Ige¹, Bola P. Odunaro⁵, Idowu J. Ojo⁶, Julius A. Oladejo⁷, Halimat O. Ajani¹, Adnan Musa⁸, Joshua Ajao⁶

¹Department of Pure and Applied Physics, Ladoke Akintola University of Technology, Ogbomosho, Nigeria.
²Department of Mechanical Engineering, Jigawa State Polytechnic, Dutse, Nigeria.
³Department of Materials Science and Engineering, Hohai University, Nanjing, China.
⁴Department of Mechanical Engineering, Ekiti State University, Ado Ekiti, Nigeria.
⁵Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, USA.
⁶Department of Chemical Engineering, Ladoke Akintola University of Technology, Ogbomoso, Nigeria.
⁷Department of Mechanical Engineering, Federal University of Technology, Akure, Nigeria.
⁸Department of Biotechnology and Genetics, Russian State Agrarian University, Moscow, Russia.

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Wide Bandgap Semiconductor, Semiconductor, Electronic Device, Power Device, Optical Device, CZTS

Akanbi, O. , Usman, H. , Abass, G. , Oni, K. , Ige, A. , Odunaro, B. , Ojo, I. , Oladejo, J. , Ajani, H. , Musa, A. and Ajao, J. (2023) The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices. Journal of Materials Science and Chemical Engineering, 11, 22-33. doi: 10.4236/msce.2023.113002.