Author(s)

Yuxi Wang^1,2,3, Yida Chen⁴, Yong Zhang^1,2,3, Zhaoxin Zhu⁵, Tao Wu¹, Xufeng Kou¹, Pingping Ding⁴, Romain Corcolle⁴, Jangyong Kim^1,5

¹School of Information Science and Technology, ShanghaiTech University, Shanghai, China.
²Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
³University of the Chinese Academy of Sciences, Beijing, China.
⁴Division of Engineering and Computer Science, NYU Shanghai, Shanghai, China.
⁵ShanghaiTech Quantum Device Laboratory, ShanghaiTech University, Shanghai, China.

The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al₂O₃ thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al₂O₃ films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al₂O₃/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm²at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10⁻⁸ A/cm² at 1 MV/cm (5 V) at room temperature. Au/Al₂O₃/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm² at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10⁻¹⁰ A/cm² at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.

Dielectrics, High-k, Thin Film Capacitors, Atomic Layer Deposition, Microfabrication

Wang, Y. , Chen, Y. , Zhang, Y. , Zhu, Z. , Wu, T. , Kou, X. , Ding, P. , Corcolle, R. and Kim, J. (2021) Experimental Characterization of ALD Grown Al₂O₃ Film for Microelectronic Applications. Advances in Materials Physics and Chemistry, 11, 7-19. doi: 10.4236/ampc.2021.111002.