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[1]
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2023
DOI:10.2139/ssrn.4349403
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[2]
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Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness
Applied Surface Science,
2023
DOI:10.1016/j.apsusc.2023.157876
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[3]
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External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot
Journal of Applied Mathematics and Physics,
2021
DOI:10.4236/jamp.2021.910155
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[4]
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Thermoluminescence from Silicon Quantum Dots in the Two Traps-One Recombination Center Model
Ukrainian Journal of Physics,
2017
DOI:10.15407/ujpe62.02.0140
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[5]
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Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots
Acta Physica Polonica A,
2016
DOI:10.12693/APhysPolA.129.362
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[6]
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Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgallium
Journal of Crystal Growth,
2015
DOI:10.1016/j.jcrysgro.2014.11.007
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[7]
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Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector
Optical and Quantum Electronics,
2015
DOI:10.1007/s11082-014-0111-0
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[8]
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Graphene-capped InAs/GaAs quantum dots
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2013
DOI:10.1116/1.4790365
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[9]
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Graphene-capped InAs/GaAs quantum dots
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
2013
DOI:10.1116/1.4790365
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