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[1]
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GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
2021
DOI:10.1109/BCICTS50416.2021.9682497
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[2]
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Characterization of the Absence of Polar and Inter-valley Scattering Mechanisms from Charge-Carrier Energy Curves for “In0.53Ga0.47As” Using Monte Carlo Simulation
Transactions on Electrical and Electronic Materials,
2018
DOI:10.1007/s42341-018-0029-5
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[3]
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Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
Journal of Electronic Materials,
2018
DOI:10.1007/s11664-018-6535-8
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[4]
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Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar
Journal of Applied Physics,
2017
DOI:10.1063/1.4979097
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[5]
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Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy
Journal of Materials Science,
2017
DOI:10.1007/s10853-017-0763-9
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[6]
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Modern comparative approach for carrier transport in InAlN/AlN superlattice device with characteristics and modelling using nitride (14N,15N) isotopes
Superlattices and Microstructures,
2017
DOI:10.1016/j.spmi.2017.01.008
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[7]
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Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar
Journal of Applied Physics,
2017
DOI:10.1063/1.4979097
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[8]
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Numerical simulation of local doped barrier layer AlGaN/GaN HEMTs
Superlattices and Microstructures,
2013
DOI:10.1016/j.spmi.2013.05.017
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