has been cited by the following article(s):
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[1]
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Experimental Characterization of ALD Grown Al2O3 Film for Microelectronic Applications
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2021 |
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[2]
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Properties of Hafnium Oxide Received by Ultra Violet Stimulated Plasma Anodization
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2017 |
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[3]
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Properties of Hafnium Oxide Received by Ultra Violet Stimulated Plasma Anodizing
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2017 |
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[4]
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Non-destructive depth profiling using variable kinetic energy-x-ray photoelectron spectroscopy with maximum entropy regularization
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2016 |
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[5]
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Clusterization modes of Ti on TiO2 (1 1 0)-1× 1 due to stablization by catalytic suboxide formation
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Journal of Physics: Condensed Matter,
2015 |
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[6]
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Effect of Halo structure variations on the threshold voltage of a 22nm gate length NMOS transistor
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Materials Science in Semiconductor Processing,
2014 |
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[7]
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Nanostructured glass covers for photovoltaic applications
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Doctoral dissertation,
2014 |
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[8]
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Annealing induced changes in the structure, optical and electrical properties of GeTiO< sub> 2 nanostructured films
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Applied Surface Science. Elsevier,
2014 |
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[9]
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Optimisation of Process Parameters for Lower Leakage Current in 22 nm n-type MOSFET Device using Taguchi Method
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Jurnal Teknologi,
2014 |
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[10]
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Annealing induced changes in the structure, optical and electrical properties of GeTiO 2 nanostructured films
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Applied Surface Science,
2014 |
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[11]
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Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
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Applied Surface Science,
2014 |
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[12]
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Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
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Materials Science in Semiconductor Processing,
2014 |
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[13]
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外置式电感耦合化学气相沉积法低温制备 SiO2 薄膜
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材料科学与工程学报,
2013 |
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[14]
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Robust Optimization of planar High-k/Metal Gate NMOS Device with 22nm gate length
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Editorial Board,
2013 |
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[15]
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Materials Science in Semiconductor Processing
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Australian Journal of Basic & Applied Sciences,
2012 |
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[16]
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Design and Optimization of 22nm NMOS Transistor.
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Australian Journal of Basic & Applied Sciences,
2012 |
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[1]
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Properties of Hafnium Oxide Received by Ultra Violet Stimulated Plasma Anodization
IEEE Transactions on Device and Materials Reliability,
2017
DOI:10.1109/TDMR.2017.2751078
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[2]
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Clusterization modes of Ti on TiO2(1 1 0)-1 × 1 due to stablization by catalytic suboxide formation
Journal of Physics: Condensed Matter,
2015
DOI:10.1088/0953-8984/27/12/122001
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[3]
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Effect of Halo structure variations on the threshold voltage of a 22nm gate length NMOS transistor
Materials Science in Semiconductor Processing,
2014
DOI:10.1016/j.mssp.2013.09.009
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