has been cited by the following article(s):
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[1]
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Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes
Applied Physics A,
2016
DOI:10.1007/s00339-016-0087-7
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[2]
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Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands
Journal of Semiconductors,
2016
DOI:10.1088/1674-4926/37/5/054001
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