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High performance InAs0.91Sb0.09 MWIR detectors with an AlAs1-ySby graded barrier
Infrared Physics & Technology,
2023
DOI:10.1016/j.infrared.2023.104584
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High-power, multi-junction, 905 nm vertical-cavity surface-emitting laser with an AlGaAsSb electron-blocking layer
Optics Letters,
2023
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Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE
Applied Physics Letters,
2023
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Structural and thermal properties of InSb:Mn with MnSb clusters
Journal of Physics: Conference Series,
2022
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Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications
Materials Today Communications,
2021
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Two-plasmon spontaneous emission from a nonlocal epsilon-near-zero material
Communications Physics,
2021
DOI:10.1038/s42005-021-00586-4
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[7]
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Phonon frequencies, mechanical and optoelectronic properties for $${\mathbf{InP}}_{{\mathbf{x}}} {\mathbf{As}}_{{\mathbf{y}}} {\mathbf{Sb}}_{{1 - {\mathbf{x}} - {\mathbf{y}}}}$$/InAs alloys under the influence of pressure
Applied Physics A,
2021
DOI:10.1007/s00339-021-04551-4
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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
Materials Science and Engineering: B,
2021
DOI:10.1016/j.mseb.2021.115309
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[9]
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Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications
Materials Today Communications,
2021
DOI:10.1016/j.mtcomm.2021.102542
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[10]
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Two-plasmon spontaneous emission from a nonlocal epsilon-near-zero material
Communications Physics,
2021
DOI:10.1038/s42005-021-00586-4
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[11]
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Phonon frequencies, mechanical and optoelectronic properties for $${\mathbf{InP}}_{{\mathbf{x}}} {\mathbf{As}}_{{\mathbf{y}}} {\mathbf{Sb}}_{{1 - {\mathbf{x}} - {\mathbf{y}}}}$$/InAs alloys under the influence of pressure
Applied Physics A,
2021
DOI:10.1007/s00339-021-04551-4
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[12]
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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
Materials Science and Engineering: B,
2021
DOI:10.1016/j.mseb.2021.115309
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Hybrid Schemes for Excitation of Collective Resonances with Surface Plasmon Polaritons in Arrays of Quantum Dots in the Proximity of Graphene
Laser & Photonics Reviews,
2020
DOI:10.1002/lpor.202000237
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Raman peak shifts by applied magnetic field in InSb/Al
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Materials Research Express,
2020
DOI:10.1088/2053-1591/abbded
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[15]
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Recent advances in III-Sb nanowires: from synthesis to applications
Nanotechnology,
2019
DOI:10.1088/1361-6528/aafcce
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Metalorganic Vapor Phase Epitaxy (MOVPE)
2019
DOI:10.1002/9781119313021.ch1
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Structural and elastic behavior of aluminum pnictides with temperature effect
International Journal of Modern Physics B,
2019
DOI:10.1142/S021797921950365X
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Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators
Optics Express,
2018
DOI:10.1364/OE.26.005616
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Thermoelectric Properties of Nanostructured Material Based on Si and GaSb
Defect and Diffusion Forum,
2018
DOI:10.4028/www.scientific.net/DDF.386.102
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Study of effect of temperature on phase transition pressure of GaAs and GaSb
IOP Conference Series: Materials Science and Engineering,
2018
DOI:10.1088/1757-899X/360/1/012060
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[21]
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Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
Semiconductors,
2017
DOI:10.1134/S1063782617120053
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[22]
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Simulations of realistic multifunctional nanoantenna enabled detectors
2017 International Applied Computational Electromagnetics Society Symposium - Italy (ACES),
2017
DOI:10.23919/ROPACES.2017.7916015
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Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys
REM - International Engineering Journal,
2016
DOI:10.1590/0370-44672015690167
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Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
Semiconductors,
2016
DOI:10.1134/S1063782616050213
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Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors
Optics Express,
2016
DOI:10.1364/OE.24.021512
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[26]
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
Applied Physics Letters,
2016
DOI:10.1063/1.4962640
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[27]
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Study of In distribution on GaInSb:Al crystals by ion beam techniques
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
2016
DOI:10.1016/j.nimb.2015.09.032
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[28]
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Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope
Carbon,
2016
DOI:10.1016/j.carbon.2015.12.029
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[29]
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
Applied Physics Letters,
2016
DOI:10.1063/1.4962640
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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
Applied Physics Letters,
2015
DOI:10.1063/1.4930991
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[31]
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Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology,
2015
DOI:10.1088/0957-4484/26/44/445202
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PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application
Cryogenics,
2015
DOI:10.1016/j.cryogenics.2015.01.003
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[33]
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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
Applied Physics Letters,
2015
DOI:10.1063/1.4930991
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First principle study of the physical properties of semiconducting binary antimonide compounds under hydrostatic pressures
Materials Science in Semiconductor Processing,
2014
DOI:10.1016/j.mssp.2014.05.020
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[35]
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Ab-initio study of the structural, electronic and optical properties of BSb (110) and (100) surfaces
Surface Science,
2014
DOI:10.1016/j.susc.2014.05.002
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[36]
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Extra-low power consumption amplifier based on HEMT in unsaturated mode for use at subkelvin ambient temperatures
Cryogenics,
2014
DOI:10.1016/j.cryogenics.2014.01.012
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[37]
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
AIP Advances,
2014
DOI:10.1063/1.4902893
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Effects of physical parameters on subthreshold characteristics of nitride and antimonide-based double material gate (DMG) HEMTs
8th International Conference on Electrical and Computer Engineering,
2014
DOI:10.1109/ICECE.2014.7026974
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[39]
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Comparative study of subthreshold characteristics of different antimonide-based and nitride-based dual material gate (DMG) HEMTs
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014),
2014
DOI:10.1109/SMELEC.2014.6920818
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[40]
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
AIP Advances,
2014
DOI:10.1063/1.4902893
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Design of extra-low power consumption readout amplifiers for terahertz matrix receivers, bolometer arrays and qubits below 1 K
2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves,
2013
DOI:10.1109/MSMW.2013.6622181
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[42]
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Raman spectroscopy of self-catalyzed GaAs1−xSbxnanowires grown on silicon
Nanotechnology,
2013
DOI:10.1088/0957-4484/24/40/405707
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Superposition of states in flux qubits with a Josephson junction of the ScS type (Review Article)
Low Temperature Physics,
2012
DOI:10.1063/1.3699781
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[44]
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Superposition of states in flux qubits with a Josephson junction of the ScS type (Review Article)
Low Temperature Physics,
2012
DOI:10.1063/1.3699781
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