A Comparison Study of Input ESD Protection Schemes Utilizing NMOS, Thyristor, and Diode Devices

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ISSN Print: 1949-2421
ISSN Online: 1947-3826
www.scirp.org/journal/cn
E-mail: cn@scirp.org

"A Comparison Study of Input ESD Protection Schemes Utilizing NMOS, Thyristor, and Diode Devices"
written by Jin Young Choi,
published by Communications and Network, Vol.2 No.1, 2010

has been cited by the following article(s):

[1]	Transient Discharge Characteristics of a Diode-string ESD Clamp
	JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018

[2]	Structure Optimization of ESD Diodes for Input Protection of CMOS RF ICs
	JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017

[3]	On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device
	2016

[4]	紫外可见 NMOS 线阵图像传感器量子效率的定标研究
	2015

[5]	Study on the calibration for quantum efficiency of ultraviolet/visible NMOS linear image sensors
	2015

[6]	Study of basic effects of HPM pulses in digital CMOS integrated circuit inputs
	Electromagnetic Compatibility, IEEE Transactions on, 2012

[7]	A thyristor-only input ESD protection scheme for CMOS RF ICs
	Analog Integrated Circuits and Signal Processing, Springer, 2011

[1]	On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device Circuits and Systems, 2016 DOI:10.4236/cs.2016.79199

[2]	A thyristor-only input ESD protection scheme for CMOS RF ICs Analog Integrated Circuits and Signal Processing, 2013 DOI:10.1007/s10470-012-0026-2

[3]	Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs IEEE Transactions on Electromagnetic Compatibility, 2012 DOI:10.1109/TEMC.2012.2188720

[4]	A Thyristor-Only Input ESD Protection Scheme for CMOS RF ICs Circuits and Systems, 2011 DOI:10.4236/cs.2011.23025

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