Author(s)

Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky

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The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.

Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

I. Atabaev, T. Saliev, D. Saidov, V. Pak, K. Juraev, C. Tin, B. Atabaev and V. Giryansky, "Influence of Defects on Low Temperature Diffusion of Boron in SiC," Materials Sciences and Applications, Vol. 2 No. 9, 2011, pp. 1205-1211. doi: 10.4236/msa.2011.29163.