Author(s)

Sudip Adhikari^*, Hare Ram Aryal, Hideo Uchida, Masayoshi Umeno

Department of Electronics and Information Engineering, Chubu University, Kasugai, Japan.

Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.

Graphene Films, Direct Synthesis, H₂ Flow Rate, Silicon Substrate, Microwave Surface Wave Plasma CVD

Adhikari, S. , Aryal, H. , Uchida, H. and Umeno, M. (2016) Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature. Journal of Materials Science and Chemical Engineering, 4, 10-14. doi: 10.4236/msce.2016.43002.