Dr. Mohammad Mojammel Al Hakim

University of Southampton, UK

Email: mmah@ecs.soton.ac.uk

Qualifications

2010-Present Junior Business Fellow, London Technology Network, UK
2003-2007 Doctor of Philosophy, University of Southampton, UK

Publications (Selected)

1. M. M. A. Hakim, A. Abuelgasim, L. Tan, C. H. de Groot, W. Redman.‐White, S. Hall and P. Ashburn, “Improved Drive Current in RF Vertical MOSFETS using Hydrogen Anneal,” IEEE Electron Devices Letters, vol. 32, pp. 279‐281, 2011.
2. M. M. A. Hakim, L. Tan, K. Mallik, S. Connor, A. Bousquet, C. H. de‐Groot, W. Redman.‐White, S. Hall and P. Ashburn,“Self‐Aligned Silicidation of Surround‐Gate Vertical MOSFETS for low cost RF applications,” IEEE Transaction on Electron Devices, vol. 57, pp. 3318‐3326, 2010.
3. M. M. A. Hakim, L. Tan, O. Buiu, W. R. ‐White, S. Hall and P. Ashburn, “Improved sub‐threshold slope in short channel vertical MOSFETs using FILOX oxidation,” Solid State electronics, vol. 53, pp. 753‐759, 2009.
4. M. M. A. Hakim and P. Ashburn, “Increased lateral crystallization distance during Ni induced lateral crystallization of amorphous silicon using fluorine implantation,” Journal of the Electrochemical Society, vol. 154, pp. H734‐H742, 2007.
5. M. M. A. Hakim and P. Ashburn, “Mechanism of perimeter crystallization around a germanium seed,” Journal of the Electrochemical Society vol. 154, pp. H275-H282, 2007.
6. M. M. A. Hakim, C. H. de Groot, E. Gili, T. Uchino, S. Hall and P. Ashburn, “Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation,” IEEE Transaction on Electron Devices, vol. 53 (4),pp. 929‐933, 2006.
7. E. Gili, V. D. Kunz, T. Uchino, M. M. A. Hakim, C. H. de Groot, P. Ashburn and S. Hall, “Asymmetric Gate Induced Drain Leakage and Body Leakage in Vertical MOSFETs with Reduced Parasitic Capacitance,” IEEE Transaction on Electron Devices, vol. 53 (5), pp. 1080‐1087, 2006.
8. E. Gili, T. Uchino, M. M. A. Hakim, C. H. de Groot, O. Buiu, S. Hall, and P. Ashburn, “Shallow Junctions on Pillar Sidewalls for Sub‐100‐nm Vertical MOSFETs,” IEEE Electron Device Letters, vol. 27, pp. 692‐695, 2006.
9. M. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Perimeter crystallization of amorphous silicon around a germanium seed,” Electrochemical and Solid‐State Letters, vol. 9, pp. G236‐238, 2006.
10. M. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Lateral crystallization of amorphous silicon by germanium seeding,” Microelectronic Engineering, vol. 83, pp. 2437‐2440, 2006.
11. M. M. A. Hakim and A. Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high‐K gatedielectrics,” Solid‐State Electronics, Vol. 48, Issue 7, pp. 1095‐1100, 2004.
12. M. M. A. Hakim and A. Haque, “Computationally efficient quantum‐mechanical technique to calculate direct tunnelling gate leakage current in metal‐oxide‐semiconductor structures,” Journal of Applied Physics, Vol. 94, pp.2046‐2052, 2003.
13. M. M. A. Hakim and A. Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs,” IEEE Transaction on Electron Devices, vol. 49, pp. 1669‐1671,2002.
14. M. M. A. Hakim, K. Sun, M. Lombardini , D. E. Davies, P. L. Roach , M. R. R. de Planque , H. Morgan and P. Ashburn, “High Quality Location Controlled Polycrystalline Silicon Nanowires for Bio‐sensors,” in the 3rd International ITP Symposium Program,26th November, Southampton, UK, 2010.
15. K. Sun, M. M. A. Hakim, M. Lombardini, D. E. Davies, P. L. Roach, M. R. R. de Planque, P. Ashburn and H. Morgan, “Sensors for chemical detection based on top‐down fabricated silicon nanowires,” in NanoBioTech, November 15‐17,Montreaux, Switzerland, 2010.
16. Kai Sun, M. M. A. Hakim, J. Kong, M. R. R. de Planque, H. Morgan, P. L. Roach, D. E. Davies, P. Howarth and P. Ashburn, “Polycrystalline Silicon Nanowires Patterned by Top‐Down Lithography for Biosensor Applications,” in the 36th International Conference on Micro & nano Engineering, September 19‐22, Genoa, Itlay, 2010.
17. L. Tan, M. M. A. Hakim, S. Connor, A. Bousquet, C. H. de‐Groot, W. Redman.‐White, S. Hall and P. Ashburn, “Compact Model Extraction Issues of Nonstandard CMOS Compatible Vertical MOSFETs,” in the 11th International Conferenceon ULtimate Integration of Silicon (ULIS), March 17‐19, Glasgow, UK, 2010.
18. Sun Kai, M. M. A. Hakim, P. Ashburn, “Recrystallised Si Nanofingers and Nanowires for Low Cost Biosensor Applications,” in the International Symposium on Atom‐scale Si Hybrid Nanotechnologies, March 1st ‐ March 2nd, Southampton, 2010.
19. Sun Kai, M. M. A. Hakim, P. Ashburn, “Low Cost Nanowire Biosensor Fabrication using Thin Film Amorphous Silicon Crystallisation Technologies,” In IDRN, May 14th, Leicester, UK, 2010.
20. Sun Kai, Mohammad M. A. Hakim and Peter Ashburn, “Fluorine Dose Effect on the Nickel‐induced LateralCrystallization of Amorphous Silicon,” in the 39th European Solid‐State Device Research Conference (ESSDERC), 14 to 18th September, Athens, Greece, 2009.