Author(s)

Ousmane Sow¹, Mamadou Lamine Ba², Mohamed Abderrahim Ould El Moujtaba², Youssou Traore³, El Hadji Sow², Cheikh Tidiane Sarr², Masse Samba Diop², Grégoire Sissoko²

¹University Institute of Technology, University of Thiès, Thiès, Sénégal.
²Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
³Ecole Polytechnique de Thiès, Thiès, Sénégal.

In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.

Silicon Solar Cell, Flow Irradiation Energy, Recombination Velocity, Optimum Base Thickness

Sow, O. , Ba, M. , El Moujtaba, M. , Traore, Y. , Sow, E. , Sarr, C. , Diop, M. and Sissoko, G. (2020) Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles. Energy and Power Engineering, 12, 1-15. doi: 10.4236/epe.2020.121001.