[1]
|
S. N. Mohammed and H. Morkoc, “Progress and Prospects of Group-III Nitride Semiconductors,” Progress in Quantum Electronics, Vol. 20, No. 5-6, 1996, pp. 361- 525. doi:10.1016/S0079-6727(96)00002-X
|
[2]
|
B.Gelmont, K. Kim and M. Shur, “Monte Carlo Simulation of Electron Transport in Gallium Nitride,” Journal of Applied Physics, Vol. 74, No. 3, 1993, pp. 1818-1821.
doi:10.1063/1.354787
|
[3]
|
S. K. O’Leary, B. E. Foutz, M. S. Shur and L. F. Eastman, “Steady-State and Transient Electron Transport within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review,” Journal of Material Science: Materials in Electronics, Vol. 17, No. 2, 2006, pp. 87-126.
doi:10.1007/s10854-006-5624-2
|
[4]
|
S. Adachi, “GaAs and Related Materials, Bulk semiconducting and Superlattice Properties,” World Scientific, Singapore, 1994. doi:10.1142/9789812705709
|
[5]
|
M. A. Littlejohn, J. R. Hauser and T. H. Glisson, “Monte Carlo Calculation of Velocity-Field Relationship for Gallium Nitride,” Applied Physics Letters, Vol. 26, No. 11, 1975, pp. 625-627. doi:10.1063/1.88002
|
[6]
|
N. S. Mansour, K. W. Kim and M. A. Littlejohn, “Theoretical Study of Electron Transport in Gallium Nitride,” Journal of Applied Physics, Vol. 77, No. 6, 1995, pp. 2834-2836. doi:10.1063/1.358696
|
[7]
|
J. Kolník, I. H. Oguzman, K. F. Brennan, R. Wang, P. P. Ruden and Y. Wang, “Electronic Transport Studies of Bulk Zinc Blende and Wurtzite Phases of GaN Based on an Ensemble Monte Carlo Calculation including a Full Zone Band Structure,” Journal of Applied Physics, Vol. 78, No. 2, 1995, pp. 1033-1038. doi:10.1063/1.360405
|
[8]
|
U. V. Bhapkar and M. S. Shur, “Monte Carlo Calculation of Velocity-Field Characteristics of Wurtzite GaN,” Journal of Applied Physics, Vol. 82, No. 4, 1997, pp. 1649-1655. doi:10.1063/1.365963
|
[9]
|
J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand and K. F. Brennan, “Electron Transport Characteristics of GaN for High Temperature Device Modeling,” Journal of Applied Physics, Vol. 83, No. 9, 1998, pp. 4777- 4781. doi:10.1063/1.367269
|
[10]
|
E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht and P. P. Ruden, “Ensemble Monte Carlo Study of Electron Transport in Wurtzite InN,” Journal of Applied Physics, Vol. 85, No. 2, 1999, pp. 916-923.
doi:10.1063/1.369211
|
[11]
|
S. K. O’Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar and L. F. Eastman, “Electron Transport in Wurtzite Indium Nitride,” Journal of Applied Physics, Vol. 83, No. 2, 1998, pp. 826-829. doi:10.1063/1.366641
|
[12]
|
B. E. Foutz, L. F. Eastman, U. V. Bhapkar and M. S. Shur, “Comparison of High Field Electron Transport in GaN and GaAs,” Applied Physics Letters, Vol. 70, No. 21, 1997, pp. 2849-2851. doi:10.1063/1.119021
|
[13]
|
B. E. Foutz, S. K. O’Leary, M. S. Shur and L. F. Eastman, “Transient Electron Transport in Wurtzite GaN, InN and AlN,” Journal of Applied Physics, Vol. 85, No. 11, 1999, pp. 7727-7734. doi:10.1063/1.370577
|
[14]
|
D. K. Ferry, “High Field Transport in Wide-Band-Gap Semiconductrors,” Physical Review B, Vol. 12, No. 6, 1975, pp. 2361-2369. doi:10.1103/PhysRevB.12.2361
|
[15]
|
M. Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell, M. J. Schurman and I. T. Ferguson, “Time-Resolved Electroabsorption Measurement of the Electron Velocity-Field Characteristic in GaN,” Applied Physics Letters, Vol. 76, No. 9, 2000, pp. 1155-1157.
doi:10.1063/1.125968
|
[16]
|
E. G. Brazel, M. A. Chin, V. Narayanamurti, D. Kapolnek, E. J. Tarsa and S. P. DenBaars, “Ballistic Electron Emission Microscopy Study of Transport in GaN Thin Films,” Applied Physics Letters, Vol. 70, No. 3, 1997, pp. 330-332. doi:10.1063/1.118406
|
[17]
|
R. W. Hockney and J. W. Eastwood, “Computer Simulation Using Particles,” Bristol, Adam-Hilger, 1988.
doi:10.1887/0852743920
|
[18]
|
B. K. Ridley, “Quantum Processes in Semiconductors,” 3rd Edition, Oxford, Clarendon, 1993.
|
[19]
|
C. Jacoboni and P. Lugli, “The Monte Carlo Method for Semiconductor Device Simulation,” Springer-Verlag, New York, 1989. doi:10.1007/978-3-7091-6963-6
|
[20]
|
B. K. Ridley, “Reconciliation of the Conwell-Weisskopf and Brooks-Herring Formulae for Charged-Impurity Scattering in Semiconductors: Third-Body Interference,” Journal of Physics C: Solid State Physics, Vol. 10, No. 10, 1977, pp. 1589-1593. doi:10.1088/0022-3719/10/10/003
|
[21]
|
B. K. Ridley, “Statistically Screened Impurity Scattering in Modulation-Doped Structures,” Semiconductor science and technology, Vol. 3, No. 2, 1988, pp. 111-115.
doi:10.1088/0268-1242/3/2/006
|
[22]
|
T. G. Van de Roer and F. P. Widdershoven, “Ionized Impurity Scattering in Monte Carlo Calculations,” Journal of Applied Physics, Vol. 59, No. 3, 1986, pp. 813- 8150. doi:10.1063/1.336603
|
[23]
|
H. Brooks and C. Herring, “Scattering by Ionized Impurities in Semiconductors,” Physical Review, Vol. 83, 1951, pp. 879-887.
|
[24]
|
E.M. Conwell and V.F. Weisskopf, “Theory of Impurity Scattering in Semiconductors,” Physical Review, Vol. 77, No. 3, 1950, pp. 388-390. doi:10.1103/PhysRev.77.388
|
[25]
|
M. A. Littlejohn, J. R. Hausersand and T. H. Glisson,” Velocity-Field Characteristics of GaAs with
Conduction-Band Ordering,” Journal of Applied Physics, Vol. 48, No. 11, 1977, pp. 4587-4590.
doi:10.1063/1.323516
|
[26]
|
W. R. L. Lambrecht and B. Segall, “Band Structure of Pure GaN,” In: J. H. Edgar, Ed., Properties of Group III Nitrides, No 11 EMIS Datareviews Series, Inspec, London, 1994, pp. 141-150.
|