JCPT> Vol.4 No.1, January 2014

Remote-Plasma-Assisted Deposition of Pentacene Layer Using Atomic-Hydrogen

DownloadDownload as PDF (Size:1131KB) Full-Text HTML PP. 14-19   DOI: 10.4236/jcpt.2014.41002

ABSTRACT

Pentacene thin layers were deposited on Si with the native oxide at 80°C by remote-plasma-assisted deposition (RPAD) using hydrogen-plasma cell to supply atomic hydrogen radicals. The deposition rate was increased by RPAD comparing to that by non-excited hydrogen gas supply whereas thermal evaporation rate of pentacene from crucible was same in the both process. DFM and XRD studies showed the grain laterally grew in the thin film phase with the size above 10 μm by RPAD. First-principles molecular orbital calculations suggested pentacene is evaporated from crucible as the trimer or larger cluster but atomic hydrogen penetrated into the cluster enhances cracking of pentacene clusters to the monomer.

KEYWORDS


Cite this paper

S. Yamauchi, T. Minakuchi and M. Onodera, "Remote-Plasma-Assisted Deposition of Pentacene Layer Using Atomic-Hydrogen," Journal of Crystallization Process and Technology, Vol. 4 No. 1, 2014, pp. 14-19. doi: 10.4236/jcpt.2014.41002.

References

[1] A. R. Brown, A. Pomp, C. M. Hart and D. M. de Leeuw, “Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators,” Science, Vol. 270, No. 5238, 1995, pp. 972-974.
http://dx.doi.org/10.1126/science.270.5238.972
[2] Y. Y. Lin, D. J. Gundlach, S. F. Nelson and T. N. Jackson, “Pentacene-Based Organic Thin-Film Transistors,” IEEE Transactions on Electrical Development, Vol. 44, No. 8, 1997, pp. 1325-1331.
http://dx.doi.org/10.1109/16.605476
[3] D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson and D. G. Schlom, “Pentacene Organic Thin-Film Transistors-Molecular Ordering and Mobility,” IEEE Electron Device Letters, Vol. 18, No. 3, 1997, pp. 87-89.
http://dx.doi.org/10.1109/55.556089
[4] C. D. Dimitrakopoulos, A. R. Brown and A. Pomp, “Mo- lecular Beam Deposited Thin Films of Pentacene for Organic Field Effect Transistor Applications,” Journal of Applied Physics, Vol. 80, No. 4, 1996, pp. 2501-2511.
http://dx.doi.org/10.1063/1.363032
[5] I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth and T. M. Klapwijk, “Morphology Identification of the Thin Film Phases of Vacuum Evaporated Pentacene on SIO Substrates,” Synthetic Metals, Vol. 104, No. 3, 1999, pp. 175-178.
[6] M. Zhu and K. Varahramyan, “Performance Improvement of Organic Thin Film Transistors by SiO2/Pentacene Interface Modification Using an Electrostatically Assembled PDDA Monolayer,” Solid-State Electron, Vol. 50, No. 2, 2006, pp. 129-133.
http://dx.doi.org/10.1016/j.sse.2005.10.040
[7] T. Yokoyama, C. B. Park, K. Nagashio, K. Kita and A. Toriumi, “Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2 Ambient,” Applied Physics Express, Vol. 1, No. 4, 2008, pp. 041801-041803.
http://dx.doi.org/10.1143/APEX.1.041801
[8] Gordon Group/GAMESS.
http://www.msg.ameslab.gov/gamess/
[9] R. B. Campbell, J. M. Robertson and J. Trotter, “The Crystal Structure of Hexacene, and a Revision of the Crystallographic Data for Tetracene and Pentacene,” Acta Crys- tallographica, Vol. 15, No. 3, 1962, pp. 289-290.
http://dx.doi.org/10.1107/S0365110X62000699

comments powered by Disqus

Copyright © 2014 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.