The Growth of Single Crystals of InGaSe2 Compounds, Their X-Ray-Phase Analysis, Electronic Structure and Optical Functions

Eldar Gojaev, Zakir Jahangirli, Pyuruza Alieva, Khatira Khalilova, Tahir Musaev

Azerbaijan Technical University, Baku, Azerbaijan.

DOI: 10.4236/ojinm.2013.31001                

Abstract

Growing of InGaSe₂ single crystals has been carried out by employing the Brijman-Stockbargor methods. On the base of X-ray-analysis it has been found that the given phase is crystallized into tetragonal symmetry. The temperature dependence of electric conductivity has been studied. Band structure has been computed. Optical functions, effective masses of electrons and holes have been calculated. Origin of formation of valence and conductance bands as well as the width of forbidden band for InGaSe₂ have been determined.

Keywords

Band Structure; Optical Functions; InGaSe2

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	V. Capozzi, L. Pavesi and J. L. Staehli, “Exiton-Carrier Scattering in Gallium Selenide,” Physical Review, Vol. 47, No. 11, 1993, рр. 6340-6349.
[2]	G. B. Abdullaev, V. D. Rustamov, M. Z. Ismailov, K. M. Bunnayev and S. M. Bidzinova, “The Way of Regulation of the Sensitivity of Strain Gauges,” Patent AS539215 (USSR), 1976.
[3]	A. G. B. bdullaev, A. Q. Abdullaev, G. D. Guseinov, Z. A. Asimov and A. M. Karnaukhov, “Semiconductor Switches,” Patent AS 607502 (USSR), 1978.
[4]	G. B. Abdullaev, G. D. Guseinov, M. K. Aliev, I. V. Alekseev, E. M. K. Boorman and V. L. Photoresistor, “Semiconductor,” Patent AS 272986 (USSR), 1970.
[5]	M. Hanias and A. N. Anagnostopoulos, “Negative-Differential-Resistance Effects in the TlGaTe2 Ternary SemiConductor,” Physical Review B, Vol. 160, No. 8, 1993, pp. 4261-4266.
[6]	E. M. Gojayev, G. S. Orujov and D. M. Kafarova, “Band Structure and Dielectric Permittivity of TlGaTe2 Compound,” Solid State Physics, Vol. 46, No. 5, 2004, pp. 811- 813.
[7]	G. Orudzhev, N. Mаmеdov, H. Uchici, N. Yаmаmoto, S. Iidа, E. Gojаev, H. Toyotа and F. Hаshimzаde, “Bаnd Structure аnd Opticаl Function of Ternаry Chаin TlInSe2,” Journal of Physics аnd Chemistry of Solids, Vol. 64, No. 9-10, 2003, p. 1703.
[8]	E. M. Gojayev, G. S. Orujov, R. A. Kerimova and E. A. Allahyarov, “Band Structure and Optical Properties of a Chain Compound TlInTe2,” Solid State Physics, Vol. 48, No. 1, 2006, pp. 40-43.
[9]	M. Mobarak, H. Berger, G. F. Lorusso, V. Capozzi, G. Perna, M. M. Ibrahim and G. Margaritondo, “The Growth and Properties of Single Crystals of GaInTe2, a Ternary Chalkogenide Semiconductor,” Journal of Physics D: Applied Physics, Vol. 31, No. 12, 1998, pp. 1433-1437.
[10]	M. Mobarak, H. Berger, G. F. Lorusso, V. Capozzi, G. Perna, M. M. Ibrahim and G. Margaritondo, “The Growth and Characterization of GaInSe2 Single Crystals,” Journal of Physics D: Applied Physics, Vol. 30, No. 18, 1997, pp. 2509-2516. doi:10.1088/0022-3727/30/18/003
[11]	D. Müller, G. Eulenberger and H. Hahn, “Uber Tirnare Thallium-Chaluogenide Mittalliumselenide Structures,” Journal of Inorganic and General Chemistry, Vol. 398, No. 2, 1997, рр. 207-220.
[12]	V. Heine, M. Cohen and D. Weir, “The Pseudopotential Theory,” Mir, Moscow, 1973.
[13]	G. B. Bаchelet, D. R. Hаmаn and V. Shlüter, “Psevdopotensiаls Thаt Work: From H to Pu,” Physical Review B, Vol. 26, No. 8, 1982, pp. 4199-4228.
[14]	F. M. Hashimzade, “The Symmetry of Energy Bands in TlSe Type Crystals,” Physics, Vol. 12, No. 12, 1960, pp. 3040-3044.
[15]	X. Gonze, J.-M. Beuken, R. Caracas, F. Detraux, M. Fuchs, G.-M. Rignanese, L. Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A. Roy, M. Mikami, J.-Y. Ghosez and D. C. Raty, “First-Principles Computation of Material Properties: The ABINIT Software Project,” Computational Materials Science, Vol. 25, No. 3, 2002, pp. 478-492. doi:10.1016/S0927-0256(02)00325-7