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Flexible Graphene Devices with an Embedded Back-Gate

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DOI: 10.4236/graphene.2013.21003    3,967 Downloads   8,283 Views   Citations


We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).  

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J. Veen, A. Gomez, H. van der Zant and G. Steele, "Flexible Graphene Devices with an Embedded Back-Gate," Graphene, Vol. 2 No. 1, 2013, pp. 13-17. doi: 10.4236/graphene.2013.21003.


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