Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer

Hassen Dakhlaoui

Département de physique, Faculté des Sciences de Bizerte, Tunisie.

DOI: 10.4236/opj.2012.23020                

Abstract

We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schr?dinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor’s concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs).

Keywords

Doped GaAs; Self-Consistently; The Intersubband Absorption

Conflicts of Interest

The authors declare no conflicts of interest.

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