[1]
|
A. Kawabata, “Theory of Negative Magnetoresistance in Three-Dimensional Systems,” Solid State Communications, Vol. 34, No. 6, 1980, pp. 431-432.
doi:10.1016/0038-1098(80)90644-4
|
[2]
|
B. L. Altshuler, A. G. Aronov, A. I. Larkin and D. E. Khmelnitski, “Positive Quasiclassical Magnetoresistance and Quantum Effects in Germanium Quantum Wells,” Low Temperature Physics, Vol. 36, No. 12, 2010, Article ID: 1076. doi:10.1063/1.3536348
|
[3]
|
T. A. Dauzhenka, V. K. Ksenevich, I. A. Bashmakov and J. Galibert, “Origin of Negative Magnetoresistance in Polycrystalline SnO2 Films,” Physical Review B, Vol. 83, No. 16, 2011, Article ID: 165309.
doi:10.1103/PhysRevB.83.165309
|
[4]
|
V. L. Nguyen, B. Z. Spivak and B. I. Shklovskii, “Aha- ronov-Bohm Oscillations with Normal and Superconductive Flux-Quanta in Hopping Conduction,” Soviet Physics—JETP, Vol. 62, 1985, p. 1021.
|
[5]
|
U. Sivan, O. Entin-Wohlman and Y. Imry, “Orbital Magnetoconductance in the Variable-Range-Hopping Regime,” Physical Review Letters, Vol. 60, No. 15, 1988, pp. 1566- 1569. doi:10.1103/PhysRevLett.60.1566
|
[6]
|
J. C. Ousset, S. Askenazy, H. Rakoto and J. M. Broto, “Analytic Expressions of the Magnetoresistance Due to Localization and Electron-Electron Interaction Effects. - Application to the Amorphous Alloys La3Al and La3Ga,” Journal de Physique, Vol. 46, No. 12, 1985, pp. 2145- 2149. doi:10.1051/jphys:0198500460120214500
|
[7]
|
D. V. Baxter, R. Richter, M. L. Trudeau, R. W. Cochrane and J. O. Strom-Olsen, “Fitting to Magnetoresistance under Weak Localization in Three Dimensions,” Journal de Physique, Vol. 50, No. 13, 1989, pp. 1673-1688.
doi:10.1051/jphys:0198900500130167300
|
[8]
|
B. L. Altshuler, A. G. Aronov and D. E. Khmelnitski, “Effects of Electron-Electron Collisions with Small Energy Transfers on Quantum Localisation,” Journal of Physics C: Solid State Physics, Vol. 15, No. 36, 1982, Article ID: 7367. doi:10.1088/0022-3719/15/36/018
|
[9]
|
Y. Toyozawa, “Theory of Localized Spins and Negative Magnetoresistance in the Metallic Impurity Conduction,” Journal of the Physical Society of Japan, Vol. 17, 1962, pp. 986-1004. doi:10.1143/JPSJ.17.986
|
[10]
|
D. J. Bishop, E. G. Spencer and R. C. Dynes, “The Metal-Insulator Transition in Amorphous Nb:Si,” Solid- State Electronics, Vol. 28, No. 1-2, 1985, pp. 73-79.
doi:10.1016/0038-1101(85)90212-6
|
[11]
|
N. F. Mott, “Conduction in Glasses Containing Transition Metal Ions,” Journal of Non-Crystalline Solids, Vol. 1, No. 1, 1968, pp. 1-17.
doi:10.1016/0022-3093(68)90002-1
|
[12]
|
N. F. Mott, “Metal-Insulator Transitions,” Taylor and Francis, London, 1974.
|
[13]
|
I. S. Shlimak and E. I. Nikulin, JETP Letters, Vol. 15, 1972, p. 20.
|
[14]
|
F. R. Allen and C. J. Adkins, “Electrical Conduction in Heavily Doped Germanium,” PhysicsPhilosophical Magazine, Vol. 26, No. 4, 1972, pp. 1027-1042.
doi:10.1080/14786437208226974
|
[15]
|
N. V. Agrinskaya and V. I. Kozub, “Effect of Preexponential Factors on Temperature Behavior of VRH Conductivity,” Solid State Communications, Vol. 91, No. 11, 1994, pp. 853-857. doi:10.1016/0038-1098(94)90001-9
|
[16]
|
G. Biskupski, H. Dubois and O. Laborde, “Lecture Notes in Physics,” Springer, Berlin, 1984.
|
[17]
|
B. I. Shklovskii and A. L. Efros, “Electronic Properties of Doped Semiconductors,” Springer, Berlin, 1984.
|
[18]
|
A. L. Efros, and B. I. Shklovskii, “Coulomb Gap and Low Temperature Conductivity of Disordered Systems,” Journal of Physics C: Solid State Physics, Vol. 8, 1975, pp. L49-L51.
|
[19]
|
T. Holstein, “Hall Effect in Impurity Conduction,” Physical Review, Vol. 124, No. 5, 1961, pp. 1329-1347.
doi:10.1103/PhysRev.124.1329
|
[20]
|
A. Narjis, A. El kaaouachi, L. Limouny, S. Dlimi, A. Sybous, J. Hemine, R. Abdia and G. Biskupski, “Study of Insulating Electrical Conductivity in Hydrogenated Amorphous Silicon-Nickel Alloys at Very Low Temperature,” Physica B, Vol. 406, No. 21, 2011, pp. 4155-4158.
doi:10.1016/j.physb.2011.08.021
|
[21]
|
H. Liu, A. Pourret and P. Guyot-Sionnest, “Mott and Efros-Shklovskii Variable Range Hopping in CdSe Quantum Dots Films,” ACS Nano, Vol. 4, No. 9, 2010, pp. 5211-5216. doi:10.1021/nn101376u
|
[22]
|
V. L. Nguyen, B. Z. Spivak and B. I. Shklovskii, “Tunnel Hops in Disordered Systems,” JEPT Letters, Vol. 41, 1985, p. 42.
|
[23]
|
V. L. Nguyen, B. Z. Spivak and B. I. Shklovskii, “Aha- ronov-Bohm Oscillations with Normal and Superconductive Flux-Quanta in Hopping Conduction,” Soviet Physics—JETP, Vol. 62, 1985, p.1021.
|
[24]
|
U. Sivan, O. Entin-Wohlman and Y. Imry, “Orbital Magnetoconductance in the Variable-Range-Hopping Regime,” Physical Review Letters, Vol. 60, No. 15, 1988, pp. 1566-1569. doi:10.1103/PhysRevLett.60.1566
|
[25]
|
O. Entin-Wohlman, Y. Imry and U. Sivan, “Orbital Magnetoconductance in the Variable-Range-Hopping Regime,” Physical Review B, Vol. 40, No. 12, 1989, pp. 8342-8348. doi:10.1103/PhysRevB.40.8342
|
[26]
|
S. Ishida, S. Takaoka, K. Oto, K. Murase, S. Shirai and T. Serikawa, “Hopping Transport in Band-Tail of Grain Boundaries in Poly-Si TFTs,” Applied Surface Science, Vol. 113-114, 1997, pp. 685-688.
doi:10.1016/S0169-4332(96)00957-9
|
[27]
|
S. Shekhar, V. Prasad and S. V. Subramanyam, “Quantum Interference Effect in Strongly Localized System of Polymer-Nanocomposites,” Physics Letters A, Vol. 371, No. 5-6, 2007, pp. 486-489.
doi:10.1016/j.physleta.2007.06.060
|
[28]
|
W. Schirmacher, “Quantum-Interference Magnetoconductivity in the Variable-Range-Hopping Regime,” Physi- cal Review B, Vol. 41, No. 4, 1990, pp. 2461-2468.
doi:10.1103/PhysRevB.41.2461
|
[29]
|
H. Fukuyama and K. Yosida, “Negative Magnetoresistance in the Anderson Localized States,” Journal of the Physical Society of Japan, Vol. 46, 1979, pp. 102-105.
doi:10.1143/JPSJ.46.102
|
[30]
|
K. Yosida, “Anomalous Electrical Resistivity and Magnetoresistance Due to an s-d Interaction in Cu-Mn Alloys,” Physical Review, Vol.107, No. 2, 1957, pp. 396- 403. doi:10.1103/PhysRev.107.396
|
[31]
|
B. I. Shklovskii and A. L. Efros, “Electron Properties of Doped Somiconductors,” Springer-Verlag, Berlin, 1984.
|
[32]
|
A. El Kaaouachi, R. Abdia, A. Nafidi and H. Sahsah, “Variable Range Hopping Conductivity and Negative Magnetoresistance in n-Type InP Semiconductor,” Physica E, Vol. 32, No. 1-2, 2006, pp. 419-421.
doi:10.1016/j.physe.2005.12.083
|
[33]
|
R. Abdia, A. El Kaaouachi, A. Nafidi and J. Himine, “Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field,” Physica B, Vol. 373, No. 1, 2006, pp. 96-99. doi:10.1016/j.physb.2005.11.096
|
[34]
|
A. El Kaaouachi, A. Nafidi, Ah. Nafidi and G. Biskupski, “Positive and Negative Magnetoresistance on Both Sides of the Metal-Insulator Transition in Metallic n-Type InP,” Semiconductor Science and Technology, Vol. 18, No. 2, 2003, p. 69. doi:10.1088/0268-1242/18/2/301
|
[35]
|
A. El Kaaouachi, A. Mouden and G. Biskupski, “Negative Magnetoresistance Due to Weak Localization and Electronelectron Interactions Effects in Metallic n-Type InP Semiconductor at Very Low Temperatures with Mag- netic Field,” Physica B, Vol. 266, No. 4, 1999, pp. 378- 381. doi:10.1016/S0921-4526(98)01217-4
|
[36]
|
L. Essaleh, J. Galibert, S. M. Wasim, E. Hernandez and J. Leotra, “Low-Field Negative Magnetoresistance in the Variable-Range-Hopping Regime in Copper Indium Diselenide,” Physical Review B, Vol. 50, No. 24, 1994, pp. 18040-18045. doi:10.1103/PhysRevB.50.18040
|
[37]
|
J. Galibert, V. A. Samuilov, V. K. Ksenevich, T. Ferrus, M. Rfailovich and J. Sokolov, “Magnetoresistance of Low Dimensional Mesoscopic Honeycomb-Shaped GaAs Networks,” Physica B, Vol. 294-295, 2001, pp. 314-318.
doi:10.1016/S0921-4526(00)00667-0
|
[38]
|
R. Abdia, A. El Kaaouachi, A. Nafidi and G. Biskupski, “Variable Range Hopping Conductivity and Negative Magnetoresistance in n-Type InP Semiconductor,” Solid- State Electronics, Vol. 53, No. 5, 2009, pp. 469-472.
doi:10.1016/j.sse.2009.02.002
|
[39]
|
L. Essaleh, “Caractérisation et étude par Magnétotransport du Composé Ternaire Semiconducteur CuInSe2,” Thèse de doctorat, Thoulouse, 1992.
|
[40]
|
M. Benzaquen, D. Walsh and K. Mazuruk, “Low-Field Magnetoresistance of n-Type GaAs in the Variable-Range Hopping Regime,” Physical Review B, Vol. 38, No. 15, 1988, pp. 10933-10936.
doi:10.1103/PhysRevB.38.10933
|
[41]
|
G. Biskupski and H. Dubois, “Impurity Conduction and Negative Magnetoresistance in Compensated n Type Indium Phosphide, at Low Temperature,” Solid State Com- munications, Vol. 28, No. 8, 1978, pp. 601-605.
doi:10.1016/0038-1098(78)90589-6
|
[42]
|
A. Oubraham, G. Biskupski and E. Zdanowicz, “Negative Magnetoresistance of n-Type Compensated Cadmium Arsenide (CdAs2) in the Temperature Range 11 K-4.2 K,” Solid State Communications, Vol. 77, No. 5, 1991, pp. 351-354. doi:10.1016/0038-1098(91)90749-L
|
[43]
|
X. D. Liu and E. Y. Jiang, “Low Temperature Magnetoresistance of Al-Doped ZnO Films,” Solid State Communications, Vol. 141, No. 7, 2007, pp. 394-397.
doi:10.1016/j.ssc.2006.11.023
|