Domain Wall Width in Different Ferroelectrics via Perturbation Route

Anik Bandyopadhyay, Arnab Sengupta, Kamal Choudhary, Asis K. Bandyopadhyay, Pratap C. Ray

Department of Electrical Engineering & Computer Science, University of Toledo, Toledo, USA.
Department of Materials Science and Engineering, University of Florida, Gainesville, USA.
Department of Materials Science, Pennsylvania State University, USA.
Department of Mathematics, Government College of Engineering & Leather Technology, Kolkata, India.
Dumkal Institute of Engineering and Technology, West Bengal University of Technology, Dumkal, India.

DOI: 10.4236/wjcmp.2012.22016                

Abstract

The domains are of fundamental interest for engineering a ferroelectric material. The domain wall and its width control the ferroelectric behavior to a great extent. The stability of polarization in the context of Landau-Ginzburg free energy functional has been worked out in a previous work by a perturbation approach, where two limits of domain wall width were estimated within the stability zone and they were also found to correspond well with the data on lithium niobate and lithium tantalate. In the present work, it is shown that this model is valid for a wide range of ferroelectric materials and also for a given ferroelectric, such as lithium niobate with different levels of impurities, which are known to affect the domain wall width.

Keywords

Ferroelectrics; Domain Width; Impurity Effect; Poling Field

Conflicts of Interest

The authors declare no conflicts of interest.

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