Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis
Kazunori Shinohara, Qiang Yu
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DOI: 10.4236/eng.2010.212127   PDF    HTML     9,334 Downloads   16,781 Views   Citations

Abstract

To accurately predict the fatigue life of a power device, a fatigue life evaluation method that is based on the power cycle is presented in terms of an algorithm based on a combination of electrical analysis, heat analysis, and stress analysis. In literature, the fatigue life of power devices has been evaluated on the basis of the thermal cycle. This cycle is alternately repeated within a range from a high temperature to a low temperature. In an actual operating environment, however, a power device works in a power cycle that consists of being switched ON and OFF. To accurately predict the fatigue life cycle of a device, then, the evaluation should take account of this important aspect of the power cycle. To verify the utility of the evaluation method presented in this study, the results for a power cycle based on the combined use of electrical analysis, heat analysis, and stress analysis are compared to the results based on the thermal cycle, as found in the literature. Our conclusion is that the fatigue life cycle as estimated by the thermal cycle test is higher than that estimated by the power cycle.

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K. Shinohara and Q. Yu, "Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis," Engineering, Vol. 2 No. 12, 2010, pp. 1006-1018. doi: 10.4236/eng.2010.212127.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] B. J. Baliga, “Fundamentals of Power Semiconductor Devices,” Springer-Verlag, Berlin, 2008.
[2] H. Lu, W-S. Loh, T. Tilford, et al., “Reliability of Power Electronic Modules,” InterPACK Conference American Society of Mechanical Engineers, New York, 8-11 July, 2007, pp. 883-888.
[3] S. Ramminger, N. Seliger and G. Wachutka, “Reliability Model for Al Wire Bonds Subjected to Heel Crack Failures,” Microelectronics Reliability, Vol. 40, No. 8-10, 2000, pp. 1521-1525.
[4] O. Usui, H. Muto and T. Kikunaga, “Evaluation of Temperature Distribution of a Power Semiconductor Chip Using Electrothermal Simulation,” IEEJ Transactions on Industry Applications, Vol. 124, No. 1, 2003, pp. 108- 115.
[5] M. Ishiko, M. Usui, T. Ohuchi and M. Shirai, “Design Concept for Wire-bonding Reliability Improvement by Optimizing Position in Power Devices,” Microelectronics Reliability, Vol. 37, No. 3, 2006, pp. 262-268.
[6] M. O'Keefe and A. Vlahinos, “Impacts of Cooling Technology on Solder Fatigue for Power Modules in Electric traction Drive Vehicles,” 2009 IEEE Vehicle Power and Propulsion Conference, Michigan, 7-10 September 2009, pp. 1182-1188.
[7] X. Xie, X. Bi and G. Li, “Thermal-mechanical Fatigue Reliability of PbSnAg Solder Layer of Die Attachment for Power Electronic Devices,” International Conference on Electronic Packaging Technology & High Density Packaging, Beijing, 10-13 August 2009, pp.1181-1185.
[8] L. J. Ladani, “Reliability Estimation for Large-Area Solder Joints Using Explicit Modeling of Damage,” Device and Materials Reliability, IEEE Transactions, Vol. 8, No. 2, 2008, pp. 375-386.
[9] W. D. Zhuang, P. C. Chang, F. Y. Chou and R. K. Shiue., “Effect of Solder Creep on the Reliability of Large Area Die Attachment,” Microelectronics Reliability, Vol. 41, No. 12, 2001, pp. 2011-2021.
[10] H. Ye, M. H. Lin and C. Basaran, “Failure Modes and FEM Analysis of Power Electronic Packaging,” Finite Elements in Analysis and Design, Vol. 38, No. 7, 2002, pp. 601-612.
[11] Y. Nagatomo, T. Nagase and S. Shimamura, “FEM An- alysis of Thermal Cycle Properties of the Substrates for Power Modules,” Journal of Japan Institute of Electronics Packaging, Vol. 3, No. 2, 2000, pp. 330-334.
[12] T. Matsunaga and S. Sudo, “Evaluation of Fatigue Life Reliability and New Lead Bonding Technology for Power Modules,” Mitsubishi Electr. Adv., Vol. 113, No. 5, 2006, pp. 13-16.
[13] K. Shinohara and Q. Yu, “Fatigue Evaluation of Power Devices,”, International Conference on Electronic Pack- aging Technology & High Density Packaging, 10-13 August 2009, pp. 1277-1283.
[14] O.C. Zienkiewicz and R.L. Taylor, “The Finite Element Method,” Butterworth-Heinemann, Oxford, 2005.
[15] A. Tanaka, Q. Yu, T. Shibutani, Y. Kobayashi and M. Shiratori, “Low Cycle Fatigue Reliability Evaluation of Lead-free solders,” Nippon Kikai Gakkai Zairyo Rikigaku Bumon Koenkai Koen Ronbunshu, 2005, pp. 475-476.
[16] The Society of Materials Science, “Factual Database on Creep and Creep-Fatigue Properties of Sn-37Pb and Sn-3.5Ag Solders,” The Society of Materials Science, Japan, 2004.
[17] H. Iwasaki, K. Hisano and T.Takamatsu, “Thermal Prolem of Next Generation Semiconductor Power Devices,” Nippon Kikai Gakkai Nenji Taikai Koen Ronbunshu, Vol. 6, 2003, pp. 251-252.

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