A Dependence of Crystallinity of In2O3 Thin Films by a Two-Step Heat Treatment of Indium Films on the Heating Atmosphere

Yuichi Sato, Fumito Otake, Hirotoshi Hatori

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DOI: 10.4236/jmp.2010.16051                

Abstract

A difference in crystallinity of In2O3 thin films on sapphire substrates by heat treatment of indium films was reported. Indium films were heated in an inert atmosphere or in air until they reached a specified temperature and then oxidized in air at much higher temperatures. Crystallinity of the In2O3 thin film which was heat-treated in air from room temperature was quite poor. On the other hand, narrow X-ray rocking curves of the In2O3 films were obtained when the temperature was increased in an inert atmosphere to a specified tem-perature.

Keywords

Solid Phase Epitaxy, Oxides, Sapphire, Semiconducting Materials

Conflicts of Interest

The authors declare no conflicts of interest.

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