Electronic and Optical Properties of Rocksalt CdO: A first-Principles Density-Functional Theory Study
Gang Yao, Xinyou An, Hongwen Lei, Yajun Fu, Weidong Wu
Science and Technology on Plasma physics Laboratory, Research Center of Laser Fusion, CAEP, P.O.Box 919-983, Mianyang 621900, P.R. China.
Science and Technology on Plasma physics Laboratory, Research Center of Laser Fusion, CAEP, P.O.Box 919-983, Mianyang 621900, P.R. China State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, P.R. China.
Science and Technology on Plasma physics Laboratory, Research Center of Laser Fusion, CAEP, P.O.Box 919-983, Mianyang 621900, P.R. China;State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, P.R. China.
DOI: 10.4236/mnsms.2013.31B005   PDF    HTML     4,417 Downloads   8,184 Views   Citations

Abstract

The structural, electronic and optical properties of rocksalt CdO have been studied using the plane-wave-based pseudo-potential density functional theory within generalized gradient approximation. The calculated lattice parameters are in agreement with previous experimental work. The band structure, density of states, and Mulliken charge population are obtained, which indicates that rocksalt CdO having the properties of a halfmetal due to an indirect band gap of -0.51eV. The mechanical properties show that rocksalt CdO is mechanically stable, isotropic and malleable. Significantly, we propose a correct value for ε1(0) of about 4.75, which offers theoretical data for the design and application for rocksalt CdO in optoelectronic materials.

Share and Cite:

G. Yao, X. An, H. Lei, Y. Fu and W. Wu, "Electronic and Optical Properties of Rocksalt CdO: A first-Principles Density-Functional Theory Study," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 1B, 2013, pp. 16-19. doi: 10.4236/mnsms.2013.31B005.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] J.S. Tse, D.D. Klug, S. Desgreniers, J.S. Smith, R. Dutrisac, EPL (Europhysics Letters) 86 (2009) 56001.
[2] P.D.C. King, T.D. Veal, A. Schleife, J. Zú?iga-Pérez, B. Martel, P.H. Jefferson, F. Fuchs, V. Mu?oz-Sanjosé, F. Bechstedt, C. F. McConville, Phys. Rev. B 79 (2009) 205205.
[3] R.J. Guerrero-Moreno, N. Takeuchi, Phys. Rev. B 66 (2002) 205205.
[4] H. Liu, H. Mao, M. Somayazulu, Y. Ding, Y. Meng, D. H?usermann, Phys. Rev. B 70 (2004) 094114.
[5] A. Schleife, F. Fuchs, J. Furthmüller, F. Bechstedt, Phys. Rev. B 73 (2008) 245212.
[6] J.E. Jaffe, R. Pandey, A.B. Kunz, Phys. Rev. B 43 (1991) 14030.
[7] J. Zhang, Phys. Chem. Miner. 26 (1999) 644-648.
[8] M. Durandurdu, EPL (Europhysics Letters) 84 (2008) 66003.
[9] L.F.J. Piper, A. DeMasi, K.E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Zuniga-Perez, V. Munoz-Sanjosé, Phys. Rev. B 77 (2008) 125204.
[10] P. Dufek, P. Blaha, K. Schwarz, Phys. Rev. B 50 (1994) 7279.
[11] M.D. Segall, P.J.D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne, J. Phys.: Condens. Matter 14 (2002) 2717.
[12] Y. Wang, J.P. Perdew, Phys. Rev. B 44 (1991) 13298.
[13] H.J. Monkhorst, J.D. Pack, Phys. Rev. B 13 (1976) 5188.
[14] Cimino, M. Marezio, J. Phys. Chem. Solids 17 (1960) 57-64.
[15] F. Birch, Phys. Rev. 71 ( 1947) 809.
[16] X.C. Shen, The Spectrum and Optical Property of Semiconductor, Science Press, Beijing, 1992.
[17] C.M.I. Okoye, J. Phys.: Condens. Matter 15 (2003) 5945.
[18] M.Q. Cai, Z. Yin, M.S. Zhang, Appl. Phys. Lett. 83 (2003) 2805.
[19] R. Asahi, Y. Taga, W. Mannstadt, A. J. Freeman, Phys. Rev. B 61 (2000) 7459.
[20] Q.J. Liu, Z.T. Liu, L.P. Feng, H. Tian, Solid State Sci. 12 (2010) 1748.
[21] F.P. Koffyberg, Phys. Rev. B 13 (1976) 447

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.